发明名称 |
Semiconductor integrated circuit device |
摘要 |
A semiconductor integrated circuit device according to the present invention includes a diode in a second island region. The anode region of the diode and the dividing region in a first island region having a horizontal PNP transistor are electrically connected to each other; the cathode region of the diode and the collector region of a power NPN transistor are electrically connected to each other. Accordingly, the dividing region in the first island region having a horizontal PNP transistor becomes lower in potential than the dividing regions in the other island regions, so that the inflow of free carriers (electrons) to the horizontal PNP transistor can be prevented.
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申请公布号 |
US7381998(B2) |
申请公布日期 |
2008.06.03 |
申请号 |
US20040949569 |
申请日期 |
2004.09.24 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
KANDA RYO;OKAWA SHIGEAKI;YOSHITAKE KAZUHIRO |
分类号 |
H01L21/331;H01L29/861;H01L21/822;H01L21/8222;H01L27/04;H01L27/06;H01L27/082;H01L29/732 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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