发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE |
摘要 |
A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness, different from the first thickness. A method is also contemplated which includes providing a substrate including a first layer and forming a first doped region in the first layer. The method further includes forming a second layer on the first layer and forming a second doped region in the second layer. The second doped region is formed at a different depth than the first doped region. The method also includes forming a first reachthrough in the first layer and forming a second reachthrough in second layer to link the first reachthrough to the surface.
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申请公布号 |
US2008124883(A1) |
申请公布日期 |
2008.05.29 |
申请号 |
US20070941452 |
申请日期 |
2007.11.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION, |
发明人 |
COOLBAUGH DOUGLAS D.;JOSEPH ALVIN J.;KIM SEONG-DONG;LAOZEROTTI LOUIS D.;LIU XUEFENG;RASSEL ROBERT M. |
分类号 |
H01L21/8222 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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