EQUIPMENT FOR HIGH VOLUME MANUFACTURE OF GROUP III-V SEMICONDUCTOR MATERIALS
摘要
The invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. The invention provides apparatus and methods for limiting deposition/condensation of GaCl<SUB>3</SUB> and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III - V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.
申请公布号
WO2008064109(A2)
申请公布日期
2008.05.29
申请号
WO2007US84935
申请日期
2007.11.16
申请人
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;ARENA, CHANTAL;WERKHOVEN, CHRISTIAAN