发明名称 POROUS AND DENSE HYBRID INTERCONNECT STRUCTURE AND METHOD OF MANUFACTURE
摘要 A method for manufacturing a structure includes depositing a dense dielectric over the entire wafer, which includes areas that require low dielectric capacitance and areas that require high mechanical strength. The method further includes masking areas of the dense dielectric over the areas that require high mechanical strength and curing unmasked areas of the dense dielectric to burn out porogens inside the dense dielectric and transform the unmasked areas of the dense dielectric to porous dielectric material. A semiconductor structure comprises porous and dense hybrid interconnects for high performance and reliability semiconductor applications.
申请公布号 US2008122109(A1) 申请公布日期 2008.05.29
申请号 US20060458464 申请日期 2006.07.19
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 YANG CHIH-CHAO;WONG KEITH KWONG HON;YANG HAINING
分类号 H01L23/522;H01L21/768 主分类号 H01L23/522
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