| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate which has a structure in which an aluminum alloy film forming a source-drain wiring is directly connected to a transparent electrode, and the source-drain wiring and a gate wiring both have good characteristics, and can be manufactured in a remarkably simplified process, and to provide a display device equipped with the thin-film transistor substrate. <P>SOLUTION: The thin-film transistor substrate has a gate wiring, and source and drain wirings disposed diagonally to the gate wiring. In the substrate, the composition of a single layer aluminum alloy film forming the gate electrode is the same as that of a signal layer aluminum alloy film forming the source wiring and the drain wiring. The display device is equipped with the same. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
