| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering system capable of producing a thin film having low contents of impurities, thus having satisfactory characteristics. SOLUTION: In the parallel planar type sputtering system composed in such a manner that a substrate holder 2 and a sputtering target 3 installed in a cathode are confronted, a plurality of cylindrical structures 11, 12 having diameters equal to or above the diameter of the sputtering target 3 and also having different diameters are provided; a plurality of the cylindrical structures 11, 12 are arranged so as to cover the outer circumference of the sputtering target 3, and also, the height of the cylindrical structure 11 on the inner circumferential side is made lower than that of the cylindrical structure 12 on the outer circumferential side. COPYRIGHT: (C)2008,JPO&INPIT
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