| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate which has a wiring material directly connectable to a pixel electrode and having both sufficiently low electric resistivity and excellent heat resistance even if a relatively low processing temperature such as about 250°C is applied. <P>SOLUTION: The thin-film transistor substrate has a thin-film transistor and a transparent pixel electrode, wherein an Al alloy film and a conductive oxide film are directly connected without interposition of a high-melting-point metal and some or all of Al alloy components are deposited or concentrated at the interface of contact between the Al alloy film and the conductive oxide film. The Al alloy film consists of an Al-α-X alloy containing 0.1-6 atom% of an element belonging to a groupαand 0.1-2.0 atom% of an element belonging to a group X, wherein the element belonging to the groupαis at least one kind selected from among Ni, Ag, Zn, Cu and Ge, and the element belonging to the group X is at least one kind selected from among Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, Ce, Pr, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu and Dy. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
