| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, formed comprising different kinds of a plurality of gate insulating membranes in the identical silicon substrate, by selectively forming a silicon nitride membrane, without damaging or contaminating the silicon substrate surface, and to provide a method for manufacturing the semiconductor device. SOLUTION: A silicon oxide membrane is formed on the silicon substrate surface, and a part of the silicon oxide membrane is removed; and at the same time as a silicon nitride membrane is formed on the substrate surface where the silicon oxide membrane is removed, nitrogen is introduced on the surface of the silicon oxide membrane that is left remaining without removing the membrane. Additionally, a silicon oxide membrane is deposited on the silicon substrate surface by chemical vapor deposition method, and a part of the silicon oxide membrane is removed; while the silicon nitride membrane is formed on the substrate surface where the silicon oxide membrane is removed, nitrogen is introduced on the surface of the silicon oxide membrane that is left unremoved, then successively, the substrate surface is exposed by dissolving and removing the silicon oxide membrane with the nitrogen introduced; and the exposed silicon substrate surface and the silicon nitride membrane are oxidized. COPYRIGHT: (C)2008,JPO&INPIT
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