| 摘要 |
A TFT(Thin Film Transistor) substrate and a method for fabricating the same are provided to prevent corrosion of gate ends, prevent a pixel defect, and reduce processing time. A TFT substrate(100) includes gate wiring formed on an insulating substrate(10), including gate lines, gate electrodes(26), and gate ends(24). A gate insulating pattern(32), an active layer pattern(44), and ohmic contact layer patterns(55,56) are sequentially arranged at a part of the gate wiring except the gate ends. Data wiring includes a capping pattern(61) directly contacting with the gate ends for covering the gate ends, data lines(62) crossing the gate lines, and source and drain electrodes(65,66) formed on the ohmic contact layer patterns, separated from each other. Auxiliary gate ends(84) are electrically connected with the gate ends. |
