| 摘要 |
A fine and high-accuracy resist pattern, which is excellent in etching resistance, can be formed. Disclosed is a resist pattern forming method, which includes the steps of developing a resist composition having photosensitivity to a predetermined light source through a lithography technique to form a resist pattern 2 on a substrate 1 , and bringing the resist pattern 2 into contact with a supercritical processing solution 5' including a supercritical fluid 3' which contains a crosslinking agent 4.
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