| 摘要 |
PROBLEM TO BE SOLVED: To provide a sample analysis device which is suitable for the analysis of a thick sample and which can identify the material of the sample. SOLUTION: The sample analysis device comprises an irradiation system which irradiates charged particles to a wafer 18, having a recessed part partially on the surface; a rotation ellipse reflecting mirror 17 which collects luminescence obtained from the surface side of the sample, based on irradiation of the charged particles; a photodetector 33 which detects the luminescence led by the rotating ellipse reflecting mirror 17; a charged particle detector 25 which detects the charged particles reflected from the surface of the sample; and a signal processing part 24 which determines the shape of the sample, based on the detection signal of the charged particle detector 25 and identifies the material of the wafer 18, based on the detection signal of the photodetector 33. The irradiation system is controlled so as to irradiate the charged particles on the wafer intermittently, and the signal processing part 24 identifies the sample, based on attenuation property of the detection signal from the photodetector 33 during a period, from the end point of the intermittent irradiation to the starting point of intermittent irradiation of the charged particles. COPYRIGHT: (C)2008,JPO&INPIT
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