MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE HAVING EMITTING LAYER INCLUDING SILICON NANO-DOT, SEMICONDUCTOR LIGHT-EMITTING DIODE ARRAY INCLUDING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE, AND METHOD OF FABRICATING THE MICRO-SIZED SEMICOND
摘要
<p>A micro-sized semiconductor light-emitting diode includes an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside.</p>
申请公布号
WO2008060053(A1)
申请公布日期
2008.05.22
申请号
WO2007KR05469
申请日期
2007.10.31
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;HUH, CHUL;SHIN, JAEHEON;KIM, KYUNG-HYUN;HONG, JONGCHEOL;SUNG, GUN-YONG