发明名称 MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE HAVING EMITTING LAYER INCLUDING SILICON NANO-DOT, SEMICONDUCTOR LIGHT-EMITTING DIODE ARRAY INCLUDING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE, AND METHOD OF FABRICATING THE MICRO-SIZED SEMICOND
摘要 <p>A micro-sized semiconductor light-emitting diode includes an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside.</p>
申请公布号 WO2008060053(A1) 申请公布日期 2008.05.22
申请号 WO2007KR05469 申请日期 2007.10.31
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;HUH, CHUL;SHIN, JAEHEON;KIM, KYUNG-HYUN;HONG, JONGCHEOL;SUNG, GUN-YONG 发明人 HUH, CHUL;SHIN, JAEHEON;KIM, KYUNG-HYUN;HONG, JONGCHEOL;SUNG, GUN-YONG
分类号 H01L33/26 主分类号 H01L33/26
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