| 摘要 |
PROBLEM TO BE SOLVED: To provide an organometallic compound useful for chemical vapor phase deposition (CVD) and atomic layer deposition (ALD) of a thin film. SOLUTION: This organometallic compound containing a phosphoamidinate ligand is provided. Such the compound is particularly suitable for a use as a vapor deposition precursor. The method for piling the thin film such as the ALD, CVD, etc., by using such the compound is also provided. COPYRIGHT: (C)2008,JPO&INPIT
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