发明名称 |
Deposition of amorphous silicon films by electron cyclotron resonance |
摘要 |
<p>A method is described for forming a film of amorphous silicon (a-Si:H) on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The substrate is held during deposition at a temperature in the range 200-600°C, preferably 225-350°C and a bias voltage is applied to the substrate at a level to give rise to a sheath potential in the range -30 to-105V, preferably using a source of RF power in the range of 50-250 mW/cm 2 of the area of the substrate holder.</p> |
申请公布号 |
EP1923483(A1) |
申请公布日期 |
2008.05.21 |
申请号 |
EP20060301114 |
申请日期 |
2006.11.02 |
申请人 |
DOW CORNING CORPORATION;ECOLE POLYTECHNIQUE |
发明人 |
ROCA I CABARROCAS, PERE;BULKIN, PAVEL;DAINEKA, DMITRI;DAO, THIEN HAI;LEEMPOEL, PATRICK;DESCAMPS, PIERRE;KERVYN DE MEERENDRÉ, THIBAULT |
分类号 |
C23C16/24;C23C16/511;H01J37/32 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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