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发明名称
以雷射制作氮化镓装置之方法
摘要
一种以雷射制作氮化镓装置之方法,系利用一雷射产生低于磊晶层可吸收之波长,并在一基板完成磊晶后或剥离制程之同时切割晶粒之大小,以完成薄膜式发光二极体晶粒结构,故本发明适用于各种键合之制程。另,有别于一般常用之薄膜式发光二极体制程,本发明还简化了一般乾蚀刻之制程,直接利用雷射来进行晶粒大小之定义,且该雷射只要能产生使氮化镓吸收之波长,无论系固态雷射亦或气体雷射,皆可应用于本发明之方法。
申请公布号
TW200822788
申请公布日期
2008.05.16
申请号
TW095141521
申请日期
2006.11.09
申请人
国立中央大学
发明人
刘正毓;林京亮;陈柏翰
分类号
H05B33/02(2006.01);C30B33/12(2006.01);B23K26/36(2006.01)
主分类号
H05B33/02(2006.01)
代理机构
代理人
欧奉璋
主权项
地址
桃园县中坜市中大路300号
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