| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is more improved in light extraction efficiency than conventional ones. <P>SOLUTION: Irregularities having a two-dimensionally periodic structure are formed on the surface of a semiconductor multilayered film opposite to its primary surface, and a metal electrode of high reflectance is formed on the other surface. The surface where the irregularities are formed can be improved in light extraction efficiency making use of the diffraction effect of the two-dimensionally periodic structure. Light emitted toward the metal electrode is reflected toward the rugged surface by the metal electrode of high reflectance, so that an effect to be brought about by the two-dimensionally periodic structure is doubled. <P>COPYRIGHT: (C)2008,JPO&INPIT |
