发明名称 |
ELECTRONIC DEVICE INCLUDING A TRANSISTOR HAVING A METAL GATE ELECTRODE AND A PROCESS FOR FORMING THE ELECTRONIC DEVICE |
摘要 |
An electronic device includes an n-channel transistor and a p-channel transistor. The p-channel transistor has a first gate electrode with a first work function and a first channel region including a semiconductor layer immediately adjacent to a semiconductor substrate. In one embodiment, the first work function is less than the valence band of the semiconductor layer. In another embodiment, the n-channel transistor has a second gate electrode with a second work function different from the first work function and closer to a conduction band than a valence band of a second channel region. A process of forming the electronic device includes forming first and second gate electrodes having first and second work functions, respectively. First and second channel regions having a same minority carrier type are associated with the first and second gate electrodes, respectively.
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申请公布号 |
US2008111155(A1) |
申请公布日期 |
2008.05.15 |
申请号 |
US20060559633 |
申请日期 |
2006.11.14 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
CAPASSO CRISTIANO;SAMAVEDAM SRIKANTH B.;VERRET ERIC J. |
分类号 |
H01L27/088;H01L21/77 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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