发明名称 SELBSTJUSTIERTE METALLDECKSCHICHTEN FÜR ZWISCHENSCHICHT-METALLVERBINDUNGEN
摘要 <p>A method for connecting metal structures with self-aligned metal caps, in accordance with the invention, includes providing a metal structure in a first dielectric layer. The metal structure and the first dielectric layer share a substantially planar surface. A cap metal is selectively depositing on the metal structure such that the cap metal is deposited only on the metal structure. A second dielectric layer is formed over the cap metal. The second dielectric layer is opened to form a via terminating in the cap metal. A conductive material is deposited in the via to provide a contact to the metal structure through the cap metal.</p>
申请公布号 DE60036305(T2) 申请公布日期 2008.05.15
申请号 DE2000636305T 申请日期 2000.10.04
申请人 INTERNATIONAL BUSINESS MACHINES CORP.;QIMONDA NORTH AMERICA CORP. 发明人 TOBBEN, DIRK;GAMBINO, JEFFREY
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
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