发明名称 |
SELBSTJUSTIERTE METALLDECKSCHICHTEN FÜR ZWISCHENSCHICHT-METALLVERBINDUNGEN |
摘要 |
<p>A method for connecting metal structures with self-aligned metal caps, in accordance with the invention, includes providing a metal structure in a first dielectric layer. The metal structure and the first dielectric layer share a substantially planar surface. A cap metal is selectively depositing on the metal structure such that the cap metal is deposited only on the metal structure. A second dielectric layer is formed over the cap metal. The second dielectric layer is opened to form a via terminating in the cap metal. A conductive material is deposited in the via to provide a contact to the metal structure through the cap metal.</p> |
申请公布号 |
DE60036305(T2) |
申请公布日期 |
2008.05.15 |
申请号 |
DE2000636305T |
申请日期 |
2000.10.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP.;QIMONDA NORTH AMERICA CORP. |
发明人 |
TOBBEN, DIRK;GAMBINO, JEFFREY |
分类号 |
H01L21/768;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|