发明名称 |
FERROMAGNETIC MATERIAL |
摘要 |
<p>A method is provided for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with manganese to a maximum level of 5 atomic percent concentration. The material is preferably sintered at a maximum temperature of 650° C. The result of this process is a semiconductor material comprising Mn-doped ZnO with a Mn concentration not exceeding 5 atomic percent, wherein the Mn-doped ZnO is ferromagnetic within at least a part of the temperature range from about 218 Kelvin to about 425 Kelvin.</p> |
申请公布号 |
EP1601629(B1) |
申请公布日期 |
2008.05.14 |
申请号 |
EP20040708955 |
申请日期 |
2004.02.06 |
申请人 |
NM SPINTRONICS AB |
发明人 |
SHARMA, PARMANAND;RAO, KUDUMBOOR VENKAT;JOHANSSON, BOERJE;AHUJA, RAJEEV |
分类号 |
C04B35/453;H01F1/00;H01F1/40;H01F10/10;H01F10/193;H01F41/02;H01F41/18;H01F41/20;H01L41/18;H01L43/10 |
主分类号 |
C04B35/453 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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