A MANUFACTURING METHOD OF ELECTRODE FOR PLASMA ETCHING DEVICE

摘要

A method for manufacturing an electrode using a plasma etching device is provided to accurately form plural gas holes in a short time by etching a substrate for the electrode according to a gas hole pattern formed on a mask. A gas hole pattern(37a) is formed on a mask(37). A plasma etching process is performed to form a gas hole(10a), while the mask is mounted on a substrate(10) for an electrode. A dry film is attached to a metal mask substrate. The mask substrate is partially etched, such that the dry film is developed. The developed mask substrate is wet-etched, such that the gas hole pattern is formed on the mask substrate. Photosensitive liquid is applied on an upper surface of the electrode substrate. The electrode substrate is partially exposed, such that the gas hole pattern is formed on the photosensitive liquid.