| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device of such a structure as cracking can be prevented at the pad portion and the underlying interconnection, and destruction of a semiconductor element can be prevented. <P>SOLUTION: An electrode layer 58 is covered with a third insulating film 60 such that the electrode layer 58 is fixed by the third insulating film 60. Consequently, deformation of the electrode layer 58 by impact at the time of bonding can be suppressed more than before. In particular, a material having Young's modulus of 1×10<SP>4</SP>kg/mm<SP>2</SP>or above is employed in the electrode layer 58, and the film thickness of the electrode layer 58 is set at 0.3 μm or above, preferably at 1 μm or above. A material having Young's modulus of 8.0×10<SP>3</SP>kg/mm<SP>2</SP>or above is employed in the pad portion 62, and the film thickness of the pad portion 62 is set at 0.5 μm or above, preferably at 1 μm or above. <P>COPYRIGHT: (C)2008,JPO&INPIT |
