| 摘要 |
An exemplary thin film transistor (TFT) array substrate ( 200 ) includes: a substrate ( 210 ), a gate electrode ( 220 ) disposed on the substrate, a gate insulating layer ( 230 ) disposed on the substrate having the gate electrode, a lightly doped amorphous silicon (a-Si) layer ( 241 ) disposed on the gate insulating layer, a first a-Si layer ( 242 ) disposed on the lightly doped a-Si layer, a source electrode ( 251 ) and a drain electrode ( 252 ) disposed on the gate insulating layer and the a-Si layer. The thin film transistor array substrate has a low leakage current.
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