| 摘要 |
A solid-state image pickup device includes a semiconductor substrate 11 , a photoelectric-conversion sensor portion 13 formed on the surface of the semiconductor substrate 11 , a pixel area including an effective pixel portion 31 and an optical black portion 32 and a low reflective film 21 with low reflectance of infrared light formed on the back of the substrate 11 . The solid-state image pickup device has satisfactory image pickup characteristics by suppressing an optical black optical level of the optical black portion from being fluctuated due to incidence of infrared light.
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