摘要 |
Disclosed relates to a ferroelectric memory device that is manufactured easily, operates at low voltage and has excellent data preservation period, and a method of manufacturing the same. In the present invention, a ferroelectric layer ( 60 ) is formed on a part corresponding to a channel region ( 4 ) on the silicon substrate ( 1 ). The ferroelectric layer ( 60 ) made of an organic material such as PVDF, etc. shows polarization characteristics at low voltage below 1V, and such polarization characteristics continue over a specific time period, not changed as time goes by. Accordingly, it is possible to manufacture a ferroelectric memory device that operates at low voltage and is manufactured with a simplified structure in a simplified method.
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