发明名称 Ferroelectric Memory Device and Method For Manufacturing the Same
摘要 Disclosed relates to a ferroelectric memory device that is manufactured easily, operates at low voltage and has excellent data preservation period, and a method of manufacturing the same. In the present invention, a ferroelectric layer ( 60 ) is formed on a part corresponding to a channel region ( 4 ) on the silicon substrate ( 1 ). The ferroelectric layer ( 60 ) made of an organic material such as PVDF, etc. shows polarization characteristics at low voltage below 1V, and such polarization characteristics continue over a specific time period, not changed as time goes by. Accordingly, it is possible to manufacture a ferroelectric memory device that operates at low voltage and is manufactured with a simplified structure in a simplified method.
申请公布号 US2008105864(A1) 申请公布日期 2008.05.08
申请号 US20060721599 申请日期 2006.09.07
申请人 UNIVERSITY OF SEOUL FOUNDATION OF INDUSTRY- ACADEMIC COOPERATION 发明人 PARK BYUNG-EUN
分类号 H01L51/00;H01L21/02 主分类号 H01L51/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利