发明名称 SEMICONDUCTOR MEMORY DEVICE AND DATA ERROR DETECTION AND CORRECTION METHOD OF THE SAME
摘要 A semiconductor memory device and a method for detecting and correcting data error of the same are provided to perform data error detection and correction selectively according to the importance of data or the weakness of reliability before the semiconductor memory device is shipped. A memory cell array comprises a plurality of first memory banks storing normal data and second memory banks in a smaller number than the first memory banks storing parity data according to the control of a first flag signal. A mode setting circuit(200) sets a first flag signal and a second flag signal controlling the usage of an additional memory bank to store the parity data in the second memory banks. A parity data generation part(300) outputs the normal data and the parity data by generating parity data for write data in response to the second flag signal by receiving the write data during write operation. A data error detection and correction part(400) detects error of the normal read data in response to the second flag signal by receiving the normal read data and the parity read data read from the memory cell array during read operation, and outputs corrected read data by correcting the normal read data when the error is detected.
申请公布号 KR100827662(B1) 申请公布日期 2008.05.07
申请号 KR20060108422 申请日期 2006.11.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, KWANG JIN;LEE, WON SEOK;KIM, DU EUNG
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
主权项
地址