METHOD OF FORMING A PHOTORESIST PATTERN

摘要

A method for forming a photoresist pattern is provided to coat a subsequentially formed layer without causing defects by performing a cleaning process for converting the surface of a hard mask layer including an SOG(spin on glass) material into a hydrophilic material. A preliminary hard mask layer including carbon as an SOG material can be formed on a substrate. A hard mask layer including a SOG material is formed on the resultant structure(S100). A cleaning process for surface treatment is performed to make the surface of the hard mask layer have a hydrophilic property(S110). An ARC(anti-reflective coating) is formed on the hard mask layer(S120). A photoresist layer is formed on the ARC(S130). The photoresist layer is patterned to form a photoresist pattern(S140).