发明名称 METHOD FOR TESTING INTERNAL HIGH VOLTAGE IN NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND VOLTAGE OUTPUTTING CIRCUIT THEREFOR
摘要 A method for testing an internal high voltage in a non-volatile semiconductor memory device and a voltage outputting circuit thereof are provided to test a voltage outputted from a voltage generator more accurately as reducing test time of the voltage. A high voltage generator(100) generates an internal voltage following to a predetermined target voltage level. A sampling pulse generation part(200) generates a sampling pulse in order to obtain the internal high voltage outputted from the high voltage generator variously according to selection output modes. A sample and hold circuit(300) samples the internal high voltage outputted from the high voltage generator in response to the sampling pulse of the sampling pulse generation part, and holds the internal high voltage during fixed time period.
申请公布号 KR100827700(B1) 申请公布日期 2008.05.07
申请号 KR20070005035 申请日期 2007.01.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, CHAE HOON;KIM, DAE HAN
分类号 G11C16/30;G11C16/32 主分类号 G11C16/30
代理机构 代理人
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