| 摘要 |
An apparatus and a method of controlling an erase voltage for a memory device are provided to increase yield of the memory device by adjusting rising and falling time of the erase voltage applied to a PWELL bulk, when erase operation of the memory device is performed. According to an apparatus for controlling an erase voltage for erase operation of a memory device, an erase voltage output part(100) controls a pumping high voltage inputted for erase operation according to a comparison voltage and then provides the erase voltage to a substrate(300). A comparison voltage control part(200) changes the comparison voltage inputted to the erase voltage output part by a constant step unit in response to a control signal varying according to a set period. The erase voltage output part includes a comparison part(110) comparing a comparison voltage with a reference voltage and outputting a control signal reflecting the level of the comparison voltage and Includes a transistor(N1) generating the erase voltage. The comparison voltage control part includes a control part(210) changing the control signal, a variable voltage part including a number of resistors and a basic voltage part including a number of resistors to provide a set basic voltage.
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