| 发明名称 |
Method of producing an N-type diamond with high electrical conductivity |
| 摘要 |
The invention relates to a method of producing an n-type diamond. The inventive method comprises an n-doping stage during which a donor species is vacuum diffused in a diamond that was initially doped with an acceptor, in order to form donor groups containing the donor species, at a temperature that is less than or equal to the dissociation temperature of the complexes formed between the acceptor and the donor species.
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| 申请公布号 |
US7368317(B2) |
申请公布日期 |
2008.05.06 |
| 申请号 |
US20050144279 |
申请日期 |
2005.06.03 |
| 申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE-CNRS;UNIVERSITE DE VERSAILLES ST-QUENTIN EN YVELINES |
发明人 |
MARIE CHEVALLIER JACQUES PAUL;TEUKAM ZEPHIRIN SYMPLICE;BALLUTAUD DOMINIQUE |
| 分类号 |
H01L21/00;C30B31/00;C30B31/06;H01L21/04;H01L21/205;H01L21/223 |
主分类号 |
H01L21/00 |
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