| 摘要 |
<p>A resistance change memory has a plurality of memory blocks (1701) and a word line (WL0). The memory blocks (1701) include a plurality of bit lines (1302,1312); a single transistor (1101) having a current limiting function; a plurality of column switches (1301,1311); a plurality of resistance change memory elements (1401,1411); and a plurality of selecting transistors (1402,1412). The transistor having the current limiting function is disposed between a bit line and a power supply. Each of the column switches is disposed on a respective bit line and includes a respective clamp transistor having a function that clamps the potential of the bit line at a predetermined value or a value lower than it. The resistance change memory elements are connected to the respective bit lines, while the selecting transistors are connected to these respective resistance change memory elements. It is arranged that the word line connect the selecting transistors, which are included in the respective memory blocks, to each other.</p> |
