SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of restraining abrupt deterioration and improving reliability, and to provide a manufacturing method of the semiconductor laser. SOLUTION: A lamination film 20F of a film 21F having a high refractive index such as AlN, and an Al2O3reflectance adjustment film 22F is formed from the side of a laser structure 10 on a main emission side end face 10F. By composing the film 21F having a high refractive index with a material having a refractive index higher than that of the reflectance adjustment film 22F, the strength of an electric field on the main emission side end face 10F is lowered, and a concentration of heat to an end face is suppressed, thus suppressing abrupt deterioration. Optical film thicknesses of the film 21F having a high refractive index and the reflectance adjustment film 22F are adjusted so that the strength of the electric field is minimized according to the reflectance of the main emission side end face 10F. An oxygen blocking layer may be provided between the lamination film 20F and the laser structure 10. The lamination film 20F is formed after removing a natural oxide generated on the main emission side end face 10F by plasma etching. COPYRIGHT: (C)2008,JPO&INPIT