| 摘要 |
<P>PROBLEM TO BE SOLVED: To significantly improve voltage conversion efficiency by separating a path for driving a gate of a high-side switch from a main current path. <P>SOLUTION: A power MOS-FET 1 is used, for example, as a transistor for a high-side switch of a non-insulating DC/DC converter. An electrode part as a source terminal ST of the power MOS-FET 1 is connected to one outer lead LS1 and two outer leads LS2 respectively via each bonding wire W. The outer lead LS1 is an external terminal connected to a path for driving a gate. The outer leads LS2 are external terminals connected to the main current path. The main current path and the path for driving a gate are connected separately from each other. Consequently, it is possible to improve the voltage conversion efficiency while reducing effects of a parasitic inductance. <P>COPYRIGHT: (C)2008,JPO&INPIT |
