| 摘要 |
PROBLEM TO BE SOLVED: To prevent a concentration of electric field on an end corner part of a trench and prevent lowering of a breakdown voltage of a device caused thereby, in a semiconductor device having a trench structure. SOLUTION: Out of intersecting plural trenches 63 and 64, a width of a trench 64 of an outermost periphery is made narrower than the width of a trench 63 of its inside, and the trench 64 of the outermost periphery is made shallower than the trench 63 of its inside, thus eliminating each singular point of a gate oxide film and gate electrodes in the trench end corner part, then alleviating or eliminating a concentration of electric field on the trench end corner part, and preventing the lowering of a breakdown voltage in the trench end corner part. COPYRIGHT: (C)2008,JPO&INPIT
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