| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an SiC single crystal stably obtaining an SiC single crystal having a flat growing surface without occurrence of polycrystallization. SOLUTION: In an apparatus for growing the SiC single crystal from an undersurface B as a starting point by bringing the undersurface B of an SiC seed crystal 110 supported at the lower end of a pulling axis 108 into contact with a molten liquid L while maintaining a temperature gradient in the Si molten liquid L in a graphite crucible 102 so that a temperature lowers from the inner toward the surface of the molten liquid, the apparatus of manufacturing the SiC single crystal is characterized in that the pulling axis 108 is rotatable about the axis center X of itself, and has an upper half part P along the axis center X and a lower half part Q including a part deviated from the axis center X, an SiC seed crystal supporting part at the lower end of the lower half part Q of the pulling axis 108 is supporting the SiC seed crystal 110 at the eccentric position which does not intersect the axis center X, and of orbiting on a horizontal circle whose center is the axis center X by the rotation of the pulling axis 108 around the axis center X. COPYRIGHT: (C)2008,JPO&INPIT
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