发明名称 CHEMICAL MECHANICAL POLISHING APPARATUS
摘要 A CMP apparatus is provided to avoid a process delay during a polishing process by preventing a wafer from being damaged by non-separation of the wafer in a process for unloading the wafer from the membrane of a polishing head to a pedestal of a transfer cup. A wafer is adsorbed to the lower end of a polishing head(120). A membrane(126) comes in contact with the surface of the wafer, formed in the lower end of the polishing head. The wafer is placed on a pedestal(142) included in a transfer cup(140). A nozzle(150) supplies fluid to a gap between the membrane and the wafer, mounted on the outer circumferential surface of the polishing head. The nozzle supplies the fluid during a process for unloading the wafer to the upper surface of the pedestal. A sensor(145) can be inserted into the upper surface of the pedestal, detecting whether the wafer is correctly placed on the pedestal.
申请公布号 KR20080035164(A) 申请公布日期 2008.04.23
申请号 KR20060101464 申请日期 2006.10.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YUN, HYUN JOO;CHOI, YOON SUNG;PARK, SUK JUNE;KO, YOUNG KWAN
分类号 H01L21/304 主分类号 H01L21/304
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