| 摘要 |
<p>The method involves setting an enclosure i.e. vacuum chamber (1), of a silicon wafer processing/transferring equipment in depression opposite to outer atmosphere by a vacuum pumping device (15). A gas e.g. argon, or a mixture of majority gas in which a test gas e.g. oxygen, nitrogen and water gas, in the atmosphere, is absent, is contained in the chamber. A plasma of gas that is present inside the chamber, is generated. A presence of a distinctive spectral line of the test gas is detected in an optical spectrum of radiation that is emitted by the gas plasma. An independent claim is also included for a gas leakage detecting device comprising a plasma generating device.</p> |
