| 摘要 |
There is here disclosed a semiconductor integrated circuit comprising a laser beam irradiation object having one end portion at which a first potential is applied, a first transistor has a source and a drain wherein one of the source and the drain to which the other end portion of the object is electrically connected, a second transistor has a source and a drain wherein one of the source and the drain of the first transistor to which the other end portion is not electrically connected is electrically connected, and a storage circuit which is electrically connected to the one of the source and the drain of the second transistor to which the first transistor is electrically connected, and which is additionally electrically connected to the one of the source and the drain of the first transistor to which the other end portion is not electrically connected.
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