| 摘要 |
A laser processing method in which particles are prevented from being generated from the cutting surface of a chip obtained by cutting a silicon wafer. Irradiation conditions of laser light (L) for forming modified regions (77-712) are altered from irradiation conditions of laser light (L) for forming modified regions (713-719) such that spherical aberration of laser light (L) is corrected in the region at a depth of 335-525 mum from the surface (3) of a silicon wafer (11). Consequently, even if the silicon wafer (11) and a functional element layer(16) are cut into semiconductor chips starting from the modified regions (71-719), twist hackle does not appear noticeably in the region at a depth of 335-525 mum and generation of particles is suppressed. |
