| 摘要 |
A tunable bandpass filter ( 10 ) is provided. An RF signal is provided at an input of the tunable bandpass filter, and a level shifted control signal (V 1, V 2 ) inputted to the tunable bandpass filter ( 10 ) switches a first arrangement and a second arrangement of one or more tuning portions ( 15, 17 - 1, 17 - 2, 17 - 3 ) in or out of the tunable bandpass filter using a GaAs FET switch. The first arrangement is coupled to the second arrangement using an inductor ( 13 ). An RF signal having a desired predetermined frequency at an output of the tunable bandpass filter ( 10 ) is produced by the switching. The tuning portions include the GaAs FET switch ( 15 ), a first capacitor ( 17 - 1 ) connected at a first signal terminal of the GaAs FET switch and a second capacitor ( 17 - 2 ) connected between a second signal terminal of the GaAs FET switch and ground. Each of the tuning portions can be arranged in parallel with one another.
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