| 摘要 |
<P>PROBLEM TO BE SOLVED: To restrain an increase in the layout area of a multiple exposure photomask having minute patterns with different dimension widths. <P>SOLUTION: A phase shift mask used for a latch feedback circuit is provided with one of phase shifters of 0° and 180°, IS1-1a, IS1-1b, IS1-2, and IS1-3 on one side surface of the gate pattern of the smallest dimension width, and the other phase shifters of 180° and 0°, IS2-1a, IS2-1b, and IS2-2 on the other side surface facing the one side surface of the gate pattern of the smallest dimension width. The phase shifters IS1-1a, IS1-1b, IS1-2, IS1-3, IS2-1a, IS2-1b, and IS2-2 are disposed by the same phase shifter width Wa. Phase shifters of the same phase are installed on both sides of the gate pattern of a minute dimension width relatively wider than the smallest dimension width. <P>COPYRIGHT: (C)2008,JPO&INPIT |
