| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition which suppresses occurrence of shape anomaly and can form a fine and high-definition resist pattern with good dimensional accuracy, and to provide a resist pattern forming method by which a fine and high-definition resist pattern can be efficiently formed with good dimensional accuracy, and a method for manufacturing a semiconductor device. <P>SOLUTION: The resist composition comprises at least a base resin, a photoacid generator, a first additive and a second additive, wherein the pKa of the second additive is larger than that of the first additive, and at a resist film formation temperature, the vapor pressure of the second additive is lower than that of the first additive. The resist pattern forming method includes: at least a resist film forming step of forming a resist film by applying and heating the resist composition on a surface to be processed; an irradiation step of selectively irradiating the resist film with ionizing radiation; a heating step of hating the resist film irradiated with the ionizing radiation; and a development step of developing the resist film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
