| 摘要 |
Microelectronic device for measurement of optical radiation includes two sources of direct voltage, MDN-transistor, two MDN-phototransistors with opaque gate electrode where at back side of sublayer under region of channel deep slots are arranged, cross section of each of those A satisfies following ratio: A<S/n,, where S – area of channel? N – number of slots, serial circuit formed with first capacitor and resistor, connected in parallel to sink and source of MDN transistor, second capacitor that is connected in parallel to the second source of direct voltage. |
