| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a MOSFET which suppresses variations in the thickness of a gate oxide film and reduces deterioration in electrical characteristics. SOLUTION: A method of manufacturing the semiconductor device includes a gate electrode polysilicon forming step of forming a nondoped polisilicon film 3. Due to the nondoped polisilicon film, a selective oxide film 7 formed upon selective oxidation after gate electrode patterning can be made thin with a small bird's beak. Since oxidation of the polysilicon upon the selective oxidation can be suppressed, variations in the thickness of the gate oxide film can be suppressed. Consequently, it is possible to obtain a semiconductor device having a MOSFET which can suppress increase or variations in the thickness of the gate oxide film with stable electrical characteristics. COPYRIGHT: (C)2008,JPO&INPIT
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