发明名称 |
Semiconductor laser device and method for fabricating the same |
摘要 |
A semiconductor laser device includes a MQW active layer, a p-type cladding layer formed on the MQW active layer, having a ridge portion and having a smaller refractive index than that of the MQW active layer, a plurality of dielectric films formed at least on part of the p-type cladding layer extending from each side of the ridge portion.
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申请公布号 |
US7356060(B2) |
申请公布日期 |
2008.04.08 |
申请号 |
US20050079526 |
申请日期 |
2005.03.15 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MOCHIDA ATSUNORI |
分类号 |
H01S5/00;H01S5/042;H01S5/22;H01S5/223;H01S5/343 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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