| 摘要 |
<p>A flash memory device and a manufacturing method of the same are provided to reduce distribution of threshold voltages by reducing interference between peripheral memory cells. A first oxide layer(108) is formed on a semiconductor substrate(101) including gates. The gates are separated from each other. A passivation layer for protecting the gates is formed on the first oxide layer. An insulating layer is formed on the passivation layer. An etch process is performed to expose the first oxide layer and to form a spacer layer on a sidewall of the passivation layer. A second oxide layer(111) is formed to bury an entire structure. The passivation layer has a thickness of 50 to 200Å and is formed by using a material having a low dielectric constant.</p> |
