| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device and a semiconductor manufacturing apparatus, in which an oxide film having ruggedness can be flattened to a satisfactory shape independently of the dispersion of processes. SOLUTION: An etch-back process of a resist film applied to the whole surface of an oxide film formed on a substrate and having ruggedness is provided with: a process for introducing etching gas containing O<SB>2</SB>gas and F-group gas of a prescribed concentration into an etch-back chamber; a process for monitoring an O<SB>2</SB>concentration in the etching chamber; and a process for controlling the O<SB>2</SB>concentration of etching gas to be introduced into the etching chamber based on the monitored O<SB>2</SB>concentration in the chamber so that the O<SB>2</SB>concentration in the etching chamber becomes a prescribed concentration. COPYRIGHT: (C)2008,JPO&INPIT
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