发明名称 Directed Multi-Deflected Ion Beam Milling of a Work Piece and Determining and Controlling Extent Thereof
摘要 Method, device, and system, for directed multi-deflected ion beam milling of a work piece, and, determining and controlling extent thereof. Providing an ion beam; and directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece. Device includes an ion beam source assembly; and an ion beam directing and multi-deflecting assembly, for directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece.
申请公布号 US2008078750(A1) 申请公布日期 2008.04.03
申请号 US20050661201 申请日期 2005.08.24
申请人 SELA SEMICONDUCTOR ENGINEERING LABORATORIES LTD. 发明人 BOGUSLAVSKY DIMITRI;CHEREPIN VALENTIN;SMITH COLIN
分类号 B23K9/00;G21K1/087 主分类号 B23K9/00
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