METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent inter-gate interference by minimizing a step of a device isolation layer. A method for manufacturing a semiconductor device comprises providing a semiconductor substrate(21) divided into an active region and a device isolation region in which a trench type device isolation layer(24a) is formed; forming a groove in a gate formation region of the active region including the device isolation layer forming a sacrifice layer at an entire surface of the substrate to bury the groove; planarizing the sacrifice layer and the device isolation layer to expose a surface of the active region removing the sacrifice layer remaining in the groove of the active region; and forming a gate on a gate formation region of the active region including the device isolation layer in which the groove is formed.