| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce surface defects of the epitaxial wafer for an AlGaInP-based light emitting diode without deteriorating light emitting diode characteristics. <P>SOLUTION: The producing method of the epitaxial wafer for the AlGaInP-based light emitting diode laminate-forms at least an n-type (Al<SB>x1</SB>Ga<SB>1-x1</SB>)<SB>y1</SB>In<SB>1-y1</SB>P clad layer (3), (Al<SB>x2</SB>Ga<SB>1-x2</SB>)<SB>y2</SB>In<SB>1-y2</SB>P active layer (4), p-type (Al<SB>x3</SB>Ga<SB>1-x3</SB>)<SB>y3</SB>In<SB>1-y3</SB>P clad layer (5) and current diffusion layer (6) composed of GaP on a conductive substrate (1) using a metal organic vapor phase epitaxy. When the current diffusion layer (6) composed of GaP is grown, the current diffusion layer (6) is grown where the growing temperature of a GaP layer (6a) at the primary stage of the growth is higher than that of the p-type (Al<SB>x3</SB>Ga<SB>1-x3</SB>)<SB>y3</SB>In<SB>1-y3</SB>P clad layer (5) and thereafter, the remaining GaP layer (6b) is grown at a low temperature equal to or lower than the growing temperature of the p-type (Al<SB>x3</SB>Ga<SB>1-x3</SB>)<SB>y3</SB>In<SB>1-y3</SB>P clad layer (5). <P>COPYRIGHT: (C)2008,JPO&INPIT |
