| 摘要 |
Anisotropic dry etching uses a hard mask as an etching mask and a mixture of fluorocarbon, oxygen and rare gas as an etching gas, and effects etching of a dielectric film and deposition of deposits on the hard mask for suppressing reduction of the thickness of the hard mask. A higher deposition rate of the deposits is employed during the middle stage of the etching than during the initial stage and final stage of the etching. The higher deposition rate suppresses the reduction of the remaining thickness of the hard mask especially during the middle stage.
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